Abstract: Charge trap (CT) based 3D NAND flash is predominating the flash storage market due to higher density, better performance and endurance than planar flash. CT-based 3D flash programs multiple ...
Abstract: A 1.8V 4 Mb floating-gate flash test chip utilizing back bias assisted band-to-band tunneling induced hot electron (B4-HE) injection mechanism (B4-Flash) has been fabricated. Double source ...
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